报告时间：2024年8月9日下午3:00  (3:00, Aug9, 2024)

报告地点：物质楼A309会议室(RoomA309, Material Science Building)

报告题目：Silicon Carbide as CMOS and Quantum Ready Platform

报告人：Jannik Schwarberg, Friedrich-Alexander-Universität Erlangen-Nürnberg（FAU）

报告摘要：

Silicon Carbide is a very promising material as well in power electronics as in quantum science. To functionalize the silicon vacancy color center in SiC a way to reduce spectral diffusion and to control the local environment of the silicon vacancies must be established. Due to the stark effect therefore a simple pin-diode in revers bias condition can be used.

The goal of the talk will be to give a general overview about CMOS compatible processing of electronic devices for quantum applications. This covers a brief introduction into the material SiC and its advantages as well as a general overview on semiconductor processing steps. Furthermore, it will give some insights on applications that can benefit from the implementation of silicon vacancies into electronic devices which will also cover the current research on that topic at the Chair of Electron Devices at FAU in Germany.

报告人简介：

2015-2019: Bachelor of Science in Nanotechnology @FAU

2019-2021: Master of Science in Material Sciences @FAU

2021-current: PhD candidate at Chair of Electron Devices @FAU

Topic of the current PhD work: Manufacturing and characterization of test devices on 4H-SiC a-plane wafers for the functionalization of silicon vacancies for quantum applications