报告时间：2024年12月23日 上午10:00  (10:00, Dec23, 2024)

报告地点：物质楼A309会议室(Room A309, Material Science Building)

报告题目：Unveiling the Potential of Two-dimensional Materials in Next-Generation Optoelectronics and Neuromorphic Systems

报告人：Dr. Wajid Ali   College of Materials Science and Engineering, Hunan University

报告人简介：Dr. Wajid Ali is currently a postdoctoral researcher at the College of Materials Science and Engineering, Hunan University, China. He earned his Doctor of Philosophy (PhD) from the National Center for Nanoscience and Technology, Chinese Academy of Sciences (UCAS), in Beijing, where he was honoured with the CAS-TWAS President’s PhD Fellowship in 2016. His research expertise lies in plasmonically-engineered physics and optoelectronics, with a focus on photodetectors, valleytronic and artificial synaptic devices based on two-dimensional materials such as MoS2 and WS2. He has published several high impact journals including JACS, Advanced optical materials, Nanoscale Advances and Applied Optics etc. Dr. Ali's research has been recognized with a substantial grant from the Foreign Young Talents Program of the Ministry of Science and Technology, Hunan Province in 2022. He is a trainer of various computer software tools essential for research, including COMSOL Multi-Physics, CST MWS, which have aided in the simulation and analysis of his work. Dr. Ali is an active member of the Materials Science Society of Pakistan (MSSP) and the Alliance of Overseas R&D Talents in Hunan Province (AORDT), where he collaborates with peers and contributes to the advancement of materials science on both national and international levels.

报告摘要：

The advent of two-dimensional (2D) materials has opened new frontiers in the realm of optoelectronics and neuromorphic computing. In this presentation, I will elaborate the intricate dynamics of vertical MoS₂/WSe₂ heterostructures, explain the temperature-dependent phonon scattering and photoluminescence that are pivotal for the development of high-efficiency photodetectors. By delving into the nanoscale interactions, I will demonstrate how these properties can be harnessed to enhance the performance of optoelectronic devices. Transitioning from fundamental research to practical applications, the presentation will showcase the innovative design of a self-powered and bipolar photodetector utilizing the WS₂-Fe₃GaTe₂ metal-semiconductor heterojunction. This section will highlight the device's capabilities in energy harvesting and its potential to revolutionize photodetection technology.

Then we will pivot to the exploration of magnetic proximity effects in WS₂/ Fe₃GaTe₂ van der Waals heterostructures, a discovery that promises to advance the field of valleytronics. This research provides a novel pathway to control electronic properties through magnetic interactions, offering a glimpse into the future of electronic devices with enhanced functionality. The presentation will climax with a discussion on the integration of ferromagnetic tunneling-controlled monolayer MoS₂ in neuromorphic circuits. This research underscores the potential of memristive and synaptic functions in neuromorphic systems, paving the way for energy-efficient computing and artificial intelligence applications.

Finally, an outlook for the future research in these areas will be presented

Keywords: Two-dimensional materials, heterostructures, optoelectronics, photodetectors, artificial synapse, valley polarization.